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  • Radiative recombination processes in β-ZnP2 single crystals 
    MITIOGLU, A.; MOROZOV, V.; KULYUK, L.; SYRBU, N. (Institutul de Fizică Aplicată al AŞM, 2010)
    The exciton states in monoclinic β-ZnP2 crystals was the subject of many research papers over a long period of time and have been extensively examined. In this work is reported that besides the excitonic luminescence in ...
  • Radical Scavenging Capacity of Walnut Oil: Effect of some Antioxidants on Storage Period 
    POPOVICI, Cristina; BAERLE, Alexei; RADU, Oxana; TATAROV, Pavel (National University of Food Technologies, Kiev, 2016)
    Among the nuts, walnut is characterized by its important amount of oil (60-65% of flesh weight). The oil extracted from walnut exhibits high contents of polyunsaturated fatty acids ω-6 (linoleic acid) and ω-3 (linolenic ...
  • Radicals and generalizations of derivations 
    COJUHARI, Elena; GARDNER, Barry (Institutul de Matematică şi Informatică al AŞM, 2017)
    By results of Slin’ko and of Anderson, the locally nilpotent and nil radicals of algebras over a field of characteristic 0 are preserved by derivations. This note deals with radical preservation by various generalizations ...
  • Radicals and idempotents I 
    COJUHARI, E. P.; GARDNER, B. J. (Taylor & Francis, 2021)
    A corner of a ring A is a subring eAe, where e is an idempotent. Radical and semi-simple classes which are hereditary for corners and cases where the radical of a ring contains all radical corners are studied.
  • Raman and electrical characterization of n-InP implanted by 630-keV nitrogen 
    TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing 
    URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M. (IEEE, 1998)
    It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow ...
  • Raman and infrared vibrational spectra of PbGa2S4 crystal 
    ZALAMAI, V. V.; SYRBU, N. N.; BEJAN, N. P.; HIRJEU, I. (Institutul de Fizică Aplicată, 2016)
    Raman scattering spectra in different geometries at temperatures 10 - 300 K and infrared vibrational spectra were investigated for PbGa2Se crystals. Contours of reflection spectra were calculated and parameters of phonons ...
  • Raman and IR-Reflectance Spectra of Porous III–V Semiconductor Structures 
    SARUA, A.; GÄRTNER, G.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; HARTNAGEL, H. L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2000)
    Porous layers on the basis of LEC-grown n-type crystals of (111)-GaP and (100)-InP were fabricated by electrochemical etching in aqueous acidic solutions. The prepared samples were studied by micro-Raman analysis and by ...
  • Raman Modes in Porous GaP under Hydrostatic Pressure 
    TIGINYANU, I. M.; URSAKI, V. V.; RAPTIS, Y. S.; STERGIOU, V.; ANASTASSAKIS, E.; HARTNAGEL, H. L.; VOGT, A.; PRÉVOT, B.; SCHWAB, C. (John Wiley & Sons, Inc., 1999)
    Bulk and free-standing porous membranes of GaP have been characterised by Raman spectroscopy under hydrostatic pressure, with emphasis to the Fröhlich surface vibration mode. Under compression, an increase in the frequency ...
  • Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth 
    TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P. (IEEE, 1996)
    The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of ...
  • Raman scattering by porous structures with InAs quantum dots 
    MILEKHIN, Alexander; URSAKI, Veacheslav; SIRBU, Lilian; TOROPOV, Alexander; TIGINYANU, Ion; ZAHN, Dietrich R. T. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    In this paper we search for the possibilities of introducing porosity in InAs/AlAs/GaAs multilayer quantum dot structures as an additional tool for the modification of their phonon spectrum. Raman spectroscopy is used as ...
  • Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion 
    PHAN, The Long; VINCENT, Roger; CHERNS, David; NGHIA, Nguyen Xuan; URSAKI, V. V. (IOP Publishing, 2008)
    We have investigated normal and resonant Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion. Experimental results show that the normal Raman spectra consist of the conventional ...
  • Raman scattering in right angle configuration on Cu2ZnSiSe4 single crystals 
    GUC, M.; LEVCENKO, S.; ZALAMAI, V.; ARUSHANOV, E.; SYRBU, N. N. (Elservier, 2017)
    Polarized Raman scattering and resonance Raman scattering spectra of Cu2ZnSiSe4 crystals measured at temperature 300 and 10 K were investigated. Nine vibrational modes of A2 symmetry, seven modes of B2 symmetry and nine ...
  • Raman scattering investigation of MnxFe1−xIn2S4 solid solutions 
    GUC, M.; URSAKI, V. V.; BODNAR, I. V.; LOZHKIN, D. V.; ARUSHANOV, E.; IZQUIERDO-ROCA, V.; PÉREZ RODRÍGUEZ, A. (ELSEVIER, 2012)
    Spinel-type MnxFe1−xIn2S4 solid solutions grown by the planar melt crystallization method (the horizontal version of the Bridgman method) are investigated by means of energy dispersive X-ray analysis and Raman scattering ...
  • Raman scattering study of pressure-induced phase transitions in AIIB2IIIC4VI defect chalcopyrites and spinels 
    TIGINYANU, I. M.; URSAKI, V. V.; MANJÓN, F. J.; TEZLEVAN, V. E. (ELSEVIER, 2003)
    AIIB2IIIC4VI defect chalcopyrites (DC) and spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. All these compounds were found to undergo a phase transition to a Raman inactive ...
  • Raman scattering study of pressure-induced phase transitions in MIn2S4 spinels 
    URSAKI, V. V.; MANJÓN, F. J.; TIGINYANU, I. M.; TEZLEVAN, V. E. (IOP Publishing, 2002)
    MIn2S4 (M = Mn, Cd, Mg spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. These compounds were found to undergo a reversible phase transition to a Raman-inactive defect ...
  • Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals 
    URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I. (IEEE, 1995)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in ...
  • Raman Spectra in As-Based Chalcogenide Optical Fibers 
    IOVU, M. S.; CULEAC, I. P.; KOUDELKA, Ladislav; VOYNAROVYCH, Ivan; VLCEK, Miroslav (American Scientific Publishers, 2014)
    Raman spectra for optical fiber samples prepared from As-based chalcogenide glass composition (As50S50, As40S60, As25S75, (As40S60)0.95:(As40Se60)0.05 and (As40S60)0.95:(Sb40S60)0.05 are investigated. The primary maximum ...
  • Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing 
    SARUA, A.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; SCHWAB, C.; GROB, J.-J.; HARTNAGEL, H. L. (American Institute of Physics, 2000)
    Porous layers on (100)-oriented n-type liquid encapsulated Czochralski grown GaP crystals were fabricated by electrochemical etching in a H2SO4 aqueous solution and analyzed by scanning electron microscopy. 12C+ ions were ...
  • Raman-active modes of porous gallium phosphide at high pressures and low temperatures 
    URSAKI, V. V.; MANJÓN, F. J.; SYASSEN, K.; TIGINYANU, I. M.; IRMER, G.; MONECKE, J. (IOP Publishing, 2002)
    Porous gallium phosphide (GaP) with a honeycomb-like morphology and a skeleton relative volume concentration c = 0.7 was investigated by Raman spectroscopy under pressure up to 10 GPa at T = 5 K. The porous samples were ...

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