Browsing Colecția instituțională by Title

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  • GaAs nanowires obtained via electrochemical etching of bulk substrates 
    MONAICO, Ed.; MORARI, V.; URSAKI, V. V.; MONAICO, E. I.; TIGINYANU, I. M.; NIELSCH, K. (Institutul de Fizică Aplicată, AŞM, 2018)
    Technological conditions for obtaining InP nanomembranes and nanowires by means of fast anodic etching of bulk substrates have been recently elaborated. Electrochemical etching is an easy, cost-effective, and very fast ...
  • Gablok the insulated self building block 
    TRONCIU, Oleg (Universitatea Tehnică a Moldovei, 2023)
    The concept of Gablok was introduced in 2019 by two Belgian engineers. The method consists of insulated hardwood blocks, insulated beams, lintels, and a tailored floor system, allowing for quick and easy DIY construction ...
  • Gajul convențional în prisma noilor reglementări ale codului civil din RM 
    SLOBOZIANU, Maria (Universitatea Tehnică a Moldovei, 2023)
    Articolul evidențiază gajul ca un mijloc de garantare ce este reprezentat printr-un bun pus la dispoziția creditorului de către debitor pentru ca acesta din urmă să-și execute obligațiile cu bună-credință. Prezentul articol ...
  • Galvano-thermomagnetic properties of Bi/sub 1-x/Sb/sub x/ nanowires at semiconductor-semimetal transition induced by elastic elongation 
    NIKOLAEVA, A.; BODIUL, P.; KONOPKO, L.; PARA, G. (IEEE, 2002)
    In the work thin single crystal (0.3 < d < 5 /spl mu/m) wires Bi/sub 1-x/Sb/sub x/ obtained by the liquid phase casting in a glass coating were investigated under elastic deformations up to 2-3% relative elongation in the ...
  • Gamedev 
    MUNTEANU, Ion; MALAIRAU, Mihail (Universitatea Tehnică a Moldovei, 2021)
    Le développement de la vente de jeux a commencé dans les années 1970, lorsque les premières consoles et PC sont entrés sur le marché. Les jeux sont considérés comme un art et une science. Le développement est généralement ...
  • GaN nanomembranes as memristors with self-rectification 
    DRAGOMAN, Mircea; CIOBANU, Vladimir; DRAGOMAN, Daniela; DINESCU, Adrian; BRANISTE, Tudor; TIGINYANU, Ion (Institute of Nanocience and Nanotechnology, INN, 2017)
    We have recently shown that GaN ultrathin membranes suspended on GaN nanowires having a thickness of 15 nm and planar dimensions of 12×184 microns are acting as memristive devices. The physical effect which explains this ...
  • GaN nanostructuring for the fabrication of thin membranes and emerging applications 
    TIGINYANU, Ion; URSAKI, Veaceslav (TUBITAK, 2014)
    We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional ...
  • GaN nucleation on (0 0 0 1)-sapphire via ion-induced nitridation of gallium 
    SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSÉ, T. (ELSEVIER, 2006)
    The growth of epitaxial GaN films on (0001)-sapphire has been investigated using X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). In order to investigate the mechanism of the growth in ...
  • GaN nucleation on 6H-SiC(0 0 0 1)-(√3×√3)R30°:Ga and c-sapphire via ion-induced nitridation of gallium: Wetting layers 
    SIDORENKO, A.; PEISERT, H.; NEUMANN, H.; CHASSE, T. (Elsevier, 2007)
    We present X-ray Photoemission (XPS) and low energy electron diffraction (LEED) investigations of initial stages of GaN film growth on sapphire(0001) and SiC(0001)-√3×√3:Ga. The growth of ultrathin films is performed by ...
  • GaN Schottky multiplier diodes prepared by electroplating: a study of passivation technology 
    COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; HARTNAGEL, H. L.; DAUMILLER, I. (IOP Publishing, 2004)
    This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects ...
  • GaN versus ZnO: Growth, properties and applications 
    TIGINYANU, Ion (Academica Greifswald, 2017)
    GaN and ZnO are wide band gap semiconductor compounds with unique properties favourable for the development of short-wavelength light emitting devices and high-power electronics. From the point of view of applications, ...
  • A GaN-based two-sensor array for methane detection in an ethanol environment 
    POPA, V.; TIGINYANU, I. M.; URSAKI, V. V.; VOLCIUS, O.; MORKOÇ, H. (IOP Publishing, 2006)
    We demonstrate that photoelectrochemical (PEC) etching of GaN layers in KOH or H3PO4 solutions leads to the formation of specific surface morphologies which cause the material to exhibit different sensitivities to certain ...
  • GaP template based semiconductor-metal nanocomposite 
    ALBU, Sergiu; MONAICO, Eduard; TIGINYANU, I. M.; URSAKI, V. V. (Institutul de Fizică Aplicată, AŞM, 2006)
    The interest in nanometer-scale materials and devices stimulated the development of alternative technologies in recent years. Metal nanowires are one of the most attractive materials because of their unique properties ...
  • Gas and Pressure Sensors 
    GHIMPU, Lidia (Romanian Inventors Forum, 2020)
    This invention relates to the manufacture of gas and pressure sensors based on thin oxide layers. The oxide thin layers were obtained by the RF magnetron sputtering method. Carbon substrates and fiber optics were used in ...
  • Gas sensing characterization of tellurium thin films by Kelvin probe technique 
    TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Institutul de Fizică Aplicată al AŞM, 2012)
    In this paper, the change of work function ( Δφ ) of the tellurium thin films was studied in response to different concentrations of nitrogen dioxide, carbon oxide, ozone and water vapor using a KP with a gold grid reference ...
  • Gas sensing characterization of tellurium thin films by the Kelvin probe technique 
    TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Academy of Sciences of Moldova, 2012)
    The sensing behavior of tellurium films at room temperature was tested with environmental pollutant gases, such as NO2, CO, O3, and water vapor, using the Kelvin probe technique. A significant sensitivity was observed for ...
  • Gas sensor based on MoO3 
    CREȚU, Vasilii; TROFIM, Viorel; SONTEA, Victor; LUPAN, Oleg (Technical University "Gheorghe Asachi" of Iași, 2018)
    Invenția se referă la tehnica semiconductorilor oxizi, in particular la senzori de gaze pe bază de oxid de molibden.Senzorul de gaze pe bază de MoO3 include un substrat dielectric, pe una din suprafețele căruia este amplasat ...
  • Gas-sensing features of nanostructured tellurium thin films 
    TSIULYANU, Dumitru (Beilstein Institute for the Advancement of Chemical Sciences (Germany), 2020)
    Nanocrystalline and amorphous nanostructured tellurium (Te) thin films were grown and their gas-sensing properties were investigated at different operating temperatures with respect to scanning electron microscopy and X-ray ...
  • Gaseous fuels potential assessment for Moldova 
    CAPITAN, Olga (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)
    In this paper, there has been determined the regional biogas and syngas potential and the electric power that could be installed. As raw materials, applicable in this field, was considered animal waste, industrial waste, ...
  • Gaslighters - who are they? 
    STEȚENCO, Iuliana (Universitatea Tehnică a Moldovei, 2022)
    Gaslighting is a manipulative technique used to make someone question their perception of reality. The name of “gaslighting” comes from the title of British playwright Patrick Hamilton's play „Gas Light” and people who use ...

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