Birefringence of ZnP2-D48 and Characteristics of Ме-ZnP2 Diodes

Abstract

Spatial dispersion in ZnP2-D4 8 has been studied. The spectral dependences of the refractive index nс (Е||с, k||a), nа (Е||а, k||с) and nb (E||b, k||c) had been determined. ZnP2-D4 8 crystals are isotropic at λо=612nm wavelength, in case of crossed polarizator a transmittance maximum is observed. It was shown that the dispersion is positive nc(Е||с,k||a), nа (Е||а,k||с) > nb(E||b,k||c) in λ>λ0 region, the dispersion is negative nс (Е||с,k||a) at λ<λ0, and Dn=nс –nb =0 at λ=λ0. The LIV characteristics of Me- ZnP2-D48 diodes had been studied at different temperatures, the temperature dependences of the “imperfection” factor δ for different Schottky barriers. Capacitance voltage characteristics of Ме- ZnP2-D4 8 photodiodes obtained by electrochemical deposition of metal and by thermo-chemical spraying in vacuum had been studied. The dependence of diffusion potential ФВ on the work function of the metal ξm(С) has been revealed. The influence of birefringence and gyration on spectral characteristics of p-n photodiodes and Schottky diodes had been revealed. The ability of controlling photodiodes’ characteristics was obtained using the gyration particularities in ZnP2-D4 8 crystals.